| PART |
Description |
Maker |
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
| NEZ1414-3E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ6472-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NEZ1011-4E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-78, 2 PIN
|
NEC, Corp.
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| CGY4111 |
HiRel L- and S-Band GaAs General Purpose Amplifier
|
Infineon Technologies AG
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
|
